qcpm9401v24851z2002a Datasheet| Pin | Name | Description | | 1 | SHDN | Logic Shutdown | | 2 | GND | Battery Management OV Reference | | 3 | THERM | Cell Temperature Monitor | | 4 | CD10 | Charge Complete Output | | 5 | VBAT | Cell Voltage Monitor Input | | 6 | VDRV | Drive Output | | 7 | VSNS | Charge Current Sense Input | | 8 | VIN | Battery Management Input Supply | | | |
qcpm9401v24851z2002a Price 100MHz Pixel Switching -3dB Bandwidth: 250MHz Sma11 16-Pin SSOP Package Channel Switching Time: 2.5ns Expandable to Larger Arrays Drives Cables Directly High Slew Rate: 1100V/~ Low Switching Transient: 50mV Shutdown Supply Current: OmA Output Short-Circuit Protected qcpm9401v24851z2002a on stock| TRANSFER CHARACTERISTICS (TA =250C Unless otherwise specified) | | AC Characteristic Test Conditions | Symbol | Min | Typ" | Max | Unit | | NON-SATURATED SWITCHING TIME Turn-on Time CNY17F-1/2/3/4 0nly (RL = 100 Q,, lc = 2 mA) | ton | | 2 | 10 | US | | Turn-off Time CNY17F-1/2/3/4 0nly (Vcc = 10 V) | toff | | 3 | 10 | | | Turn-On Time All Devices (lc = 2.0 mA, Vcc = 10 V, RL = 100 fl,)(3) | ton | | 2 | | | | Turn-Off Time All Devices (lc = 2.0 mA, Vcc = 10 V, RL = 100 Q,)(3) | toff | | 3 | | US | | Rise Time All Devices (lc = 2.0 mA, Vcc = 10 V, RL = 100 fl,)(3) | tr | | 1 | | | | Fall Time All Devices (lc = 2.0 mA, Vcc = 10 V, RL = 100 Q,)(3) | tf | | 2 | | US | | SATURATED SWITCHING TIMES Turn-on Time (IF = 20 mA, VCE = 0.4 V) CNY17F-1 | ton | | | 5.5 | US | | CNY17F-2 CNY17F-3 (IF = 10 mA, VCE = 0.4 V) CNY17F-4 | | | 8.0 | | Rise Time (IF = 20 mA, VCE = 0.4 V) | | | | 4.0 | | | CNY17F-1 CNY17F-2 CNY17F-3 (IF = 10 mA, VCE = 0.4 V) CNY17F-4 | tr | | | 6.0 | US | | Turn-off Time (IF = 20 mA, VCE = 0.4 V) | | | | 34 | | | CNY17F-1 CNY17F-2 CNY17F-3 (IF = 10 mA, VCE = 0.4 V) CNY17F-4 | toff | | | 39 | US | | Fall Time (IF = 20 mA, VCE = 0.4 V) CNY17F-1 | | | | 20 | | | CNY17F-2 CNY17F-3 (IF = 10 mA, VCE = 0.4 V) CNY17F-4 | tf | | | 24 | US | | | | | | |
| | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | V (BR) CES | Collector-emitter breakdown voltage | lc = 1mA, VGE = OV | 600 | | | V | | IGES | Collector-emitter leakage current | VGE = +30V, VCE = OV | | | +0.5 | | | ICES | Gate-emitter leakage current | VCE = 600V, VGE = OV | | | 1 | mA | | VGE(th) | Gate-emitter threshold voltage | lc = 3.OmA, VCE = 10V | 4 5 | 6 0 | 7 5 | V | | VCE(sat) | Collector-emitter saturation voltage | lc = 30A, VGE = 15V | | 2 5 | 3 0 | V | | Cies | Input capacitance | | | 1480 | | pF | | Coes | Output capacitance | VCE = 25y VGE = OV, f = 1MHz | | 180 | | pF | | Cres | Reverse transfer capacitance | | 54 | | pF | | td (on) | Turn-on delay time | | | 30 | | ns | | tr | Rise time | Vcc = 300V, Resistance load, | | 135 | | ns | | td (off) | Turn-off delay time | lc = 30A, VGE = 15V, RGE = 201 | | 135 | | ns | | tf | Fall time | | 250 | | ns | | Rth O-c) | Thermal resistance | Junction to case | | | 0 50 | IC/W | | | | | | | |
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